Operating method of memory system including memory controller and nonvolatile memory device

An operating method of a memory system including a memory controller and a nonvolatile memory device, the operating method comprising:

• preprogramming multi-page data of the memory controller to a plurality of memory cells connected to a word line of the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is preprogrammed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of preprogrammed states;
• generating a state group code based on the plurality of multi-bit data of the multi-page data, wherein the state group code includes a plurality of state group data, and wherein each of the plurality of state group data has less number of bits than a corresponding one of the plurality of multi-bit data of the multi-page data;
• backing up the state group code to the nonvolatile memory device;
• recovering, after power is recovered from the sudden power-off occurred after the state group code is backed up, the multi-page data by reading the plurality of memory cells, which are preprogrammed, based on the state group code;
• reprogramming the multi-page data, recovered from the plurality of memory cells which are preprogrammed, to the plurality of memory cells;
• and
• reprogramming the multi-page data of the memory controller to the plurality of memory cells which are preprogrammed when the sudden power-off does not occur after the state group code is backed up.

An operating method of a memory system including a memory controller and a nonvolatile memory device, the nonvolatile memory device including a memory cell region including a first metal pad, and a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad, the operating method comprising:

• preprogramming multi-page data of the memory controller to a plurality of memory cells connected to a first word line of the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is preprogrammed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of preprogrammed states;
• generating a state group code based on the plurality of multi-bit data of the multi-page data, wherein the state group code includes a plurality of state group data, and wherein each of the plurality of state group data has less number of bits than a corresponding one of the plurality of multi-bit data of the multi-page data;
• backing up the state group code to the nonvolatile memory device when sudden power-off occurs after the memory cells are preprogrammed;
• recovering, after power is recovered from the sudden power-off, the multi-page data by reading the plurality of memory cells, which are preprogrammed, based on the state group code;
• reprogramming the multi-page data, recovered from the plurality of memory cells which are preprogrammed, to the plurality of memory cells which are preprogrammed;
• and
• reprogramming the multi-page data of the memory controller to the plurality of memory cells which are preprogrammed when the sudden power-off does not occur after the memory cells are preprogrammed.