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US 11,309,022 B2Granted
RRAM voltage compensation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-An Lai, Chung-Cheng Chou, Yu-Der Chih
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Abstract
A memory device includes an array of resistive memory cells with a plurality of word lines connected to the array of resistive memory cells. A voltage compensation controller is configured to determine a word line voltage to be applied to a selected word line of the plurality of word lines. A word line driver is configured apply the determined word line voltage to the selected word line.
Claims20
A memory device, comprising:
- an array of resistive memory cells;
- a plurality of word lines connected to the array of resistive memory cells;
- a voltage compensation controller configured to determine a word line voltage to be applied to a selected word line of the plurality of word lines, wherein the voltage compensation controller being configured to determine the word line voltage to be applied to the selected word line of the plurality of word lines comprises the voltage compensation controller being configured to:
- determine a segment from a plurality of segments in which the selected word line is located in, and
- determine a predetermined word line voltage associated with the determined segment in which the word line is located in as the word line voltage to be applied to the selected word line;
- and
- a word line driver configured to apply the determined word line voltage to the selected word line.
4 more elements
A memory device comprising:
- an array of resistive memory cells;
- a plurality of word lines connected to the array of resistive memory cells;
- a voltage compensation controller configured to determine a word line voltage to be applied to a selected word line of the plurality of word lines, wherein the voltage compensation controller being configured to determine the word line voltage to be applied to the selected word line of the plurality of word lines comprises the voltage compensation controller being configured to determine the word line voltage based on a temperature of the array of resistive memory cells, and wherein the voltage compensation controller is configured to determine a minimum word line voltage at a first temperature and a maximum word line voltage at a second temperature, the second temperature being higher than the first temperature;
- and
- a word line driver configured to apply the determined word line voltage to the selected word line.
2 more elements
A method, comprising:
- providing an array of resistive memory cells;
- providing a plurality of word lines connected to the array of resistive memory cells;
- providing an I/O block connected to the plurality of bit lines;
- receiving a word line address;
- determining a word line voltage for a word line of the plurality of word lines represented by the word line address, wherein determining the word line voltage for the word line of the plurality of word lines represented by the word line address comprises:
- determining a segment from a plurality of segments in which the word line is located in, and
- determining a predetermined word line voltage associated with the determined segment in which the word line is located in as the word line voltage to be applied to the word line;
- and
- applying the word line voltage to the word line represented by the word line address.
6 more elements
Dependencies are inferred from the claim text.