Memory device transmitting small swing data signal and operation method thereof

A memory device comprising:

• a buffer die configured to output a first power supply voltage to a first through-substrate via (TSV) and to output a small swing data signal to a second TSV generated based on the first power supply voltage;
• and
• a core die electrically connected to the buffer die through the first and second TSVs, including a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV, the core die configured to receive the small swing data signal from the second TSV,
• wherein a voltage of a high level of the small swing data signal is lower than the first power supply voltage.

An operation method of a memory device which includes a buffer die and a core die electrically connected to the buffer die through a first through-substrate via (TSV) and a second TSV, the method comprising:

• supplying a first power supply voltage from the buffer die to the core die through the first TSV;
• blocking or reducing a first noise introduced to the first power supply voltage by a first cell capacitor of the core die, the first cell capacitor electrically connected to the first TSV;
• generating, at the buffer die or the core die, a small swing data signal based on the first power supply voltage;
• and
• transmitting the small swing data signal through the second TSV.