Write voltage generator for non-volatile memory

A write voltage generator coupled to a memory cell array, the write voltage generator providing a write voltage during a write operation, a storage state of a selected memory cell in a write path of the memory cell array being changed in response to the write voltage, the write voltage generator comprising:

• a temperature compensation circuit generating a transition voltage according to an ambient temperature, wherein the transition voltage decreases with the increasing ambient temperature;
• and
• a process corner compensation circuit comprising a current mirror, a storage element equivalent circuit and a write path equivalent circuit, wherein the current mirror receives the transition voltage, the storage element equivalent circuit is connected between a first terminal of the current mirror and a ground terminal, a second terminal of the current mirror is connected with a first node, the write path equivalent circuit is connected between the first node and the ground terminal, and the write voltage is outputted from the first node.