Magnetic memory devices including magnetic structure with magnetic domains

A magnetic memory device, comprising:

• a magnetic structure comprising a magnetic anisotropy;
• a read electrode on an end of the magnetic structure and configured to sense a first magnetic moment of the magnetic structure and to convert the first magnetic moment to an electric signal;
• and
• a write electrode on an opposite end of the magnetic structure and configured to change a second magnetic moment of the magnetic structure based on the electric signal,
• wherein the write electrode comprises two fixed layers having different magnetization directions from each other,
• wherein the magnetic structure is between the two fixed layers, and
• wherein the write electrode is configured to change the second magnetic moment of the magnetic structure using a second current flow passing through one of the two fixed layers and the magnetic structure.

A magnetic memory device, comprising:

• a magnetic structure comprising a magnetic anisotropy;
• a read electrode on a first end of the magnetic structure and configured to sense a first magnetic moment of the magnetic structure and to convert the first magnetic moment to an electric signal;
• a write electrode on a second end of the magnetic structure and configured to change a second magnetic moment of the magnetic structure based on the electric signal, wherein the write electrode comprises two fixed layers having different magnetization directions from each other and the write electrode is configured to change the second magnetic moment of the magnetic structure using a second current flow passing through the magnetic structure and one of the two fixed layers;
• and
• a control circuit that is configured to transfer data that is read by the read electrode to the write electrode.