Method for removing photoresistor layer, method of forming a pattern and method of manufacturing a package

A method of forming a pattern, comprising:

• forming a resist layer over a base layer;
• patterning the resist layer to form a patterned resist layer with openings exposing portions of the base layer, a material of the patterned resist layer comprising a metal oxide core with organic ligands;
• patterning the base layer by using the patterned resist layer as a mask to form a pattern;
• and
• removing the patterned resist layer, wherein removing the patterned resist layer comprises:
• performing a ligand removal process to remove the organic ligands;
• performing a fluorination process to react the metal oxide core with a fluorine-containing compound to form a metal fluoride core;
• and
• after performing the ligand removal process and the fluorination process, globally applying a chlorine-containing compound or a methyl group-containing compound onto the patterned resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the patterned resist layer so as to remove the patterned resist layer through sublimation.

A method of manufacturing a package, comprising:

• providing a semiconductor die, wherein the semiconductor die comprises a plurality of metallic posts;
• encapsulating the semiconductor die by an insulating encapsulant;
• and
• forming a redistribution circuit structure over the semiconductor die and the insulating encapsulant, comprising:
• forming a resist layer with a pattern having openings over the insulating encapsulant, a material of the resist layer comprising a metal oxide core with organic ligands;
• forming a metallization layer in the openings of the resist layer over the insulating encapsulant and electrically connected to the plurality of metallic posts;
• performing a ligand removal process to remove the organic ligands;
• performing a fluorination process to react the metal oxide core with a fluorine-containing compound to form a metal fluoride core;
• and
• after performing the ligand removal process and the fluorination process, globally applying a chlorine-containing compound or a methyl group-containing compound onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.