Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsTeruhiro Kuwajima, Yasutaka Nakashiba
Life of this patent
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Abstract
A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium.
Claims19
A semiconductor device comprising:
- a first insulating layer;
- an optical modulator formed on the first insulating layer;
- and
- a multilayer wiring layer formed on the first insulating layer such that the multilayer wiring layer covers the optical modulator, the multilayer wiring layer comprising a wiring and a resistive element which are spaced apart from each other,
- wherein, in plan view, the resistive element is formed without overlapping with the optical modulator,
- wherein a material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium,
- wherein the multilayer wiring layer comprises:
- a metallic layer;
- and
- a second insulating layer formed between the metallic layer and the wiring,
- wherein a material of the metallic layer is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium,
- wherein the metallic layer, the second insulating layer and the wiring constitute a capacitive element,
- wherein an end portion of the resistive element is electrically connected with the optical modulator and the metallic layer, and
- wherein another end portion of the resistive element is electrically connected with the wiring.
A semiconductor device comprising:
- a first insulating layer;
- an optical modulator formed on the first insulating layer;
- and
- a multilayer wiring layer formed on the first insulating layer such that the multilayer wiring layer covers the optical modulator, the multilayer wiring layer comprising a wiring and a resistive element which are spaced apart from each other,
- wherein, in plan view, the resistive element is formed without overlapping with the optical modulator,
- wherein a material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium,
- wherein the multilayer wiring layer comprises a second insulating layer formed between the resistive element and the wiring,
- wherein the resistive element, the second insulating layer and the wiring constitute a capacitive element,
- wherein an end portion of the resistive element is electrically connected with the optical modulator, and
- wherein another end portion of the resistive element is electrically connected with the wiring.
Dependencies are inferred from the claim text.