Direct type backlight device
AssigneesInterface Technology (ChengDu) Co., Ltd., Interface Optoelectronics (Shenzhen) Co., Ltd., Interface Optoelectronics (Wuxi) Co., Ltd., General Interface Solution Limited
InventorsJung-Sung Lin, Jeng-Bin Hsu, Ta-Jen Huang
Life of this patent
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Abstract
A direct type backlight device includes a printed circuit board, a light reflector and plural Mini-LEDs. The light reflector and the Mini-LEDs are disposed over the printed circuit board. The light reflector is arranged between at least part of adjacent Mini-LEDs. Each of the Mini-LEDs includes a non-light-emitting layer and a light-emitting layer arranged on the non-light-emitting layer. A bottom surface of the light-emitting layer of each of the Mini-LEDs is higher than a top surface of the light reflector.
Claims14
A direct type backlight device, comprising:
- a printed circuit board (PCB);
- a light reflector disposed over the PCB;
- and
- a plurality of Mini-LEDs disposed over the PCB;
- wherein the light reflector is arranged between at least part of adjacent Mini-LEDs;
- wherein each of the Mini-LEDs includes a non-light-emitting layer and a light-emitting layer arranged on the non-light-emitting layer;
- wherein a bottom surface of the light-emitting layer of each of the Mini-LEDs is higher than a top surface of the light reflector;
- wherein the light reflector has a thickness (Tr), wherein the thickness (Tr) of the light reflector has a tolerance (Ae);
- wherein the PCB has a plurality of bump structures and a plurality of bonding pads disposed over the bump structures, wherein the Mini-LEDs are respectively disposed over the bump structures and the Mini-LEDs are disposed over the bonding pads;
- wherein each of the bump structures has a thickness (Hb), wherein each of the bonding pads has a thickness (Cu), wherein the non-light-emitting layer of each of the Mini-LEDs has a thickness (To), wherein Hb=Tr−Cu−(To−Tr*Ae).
A direct type backlight device, comprising:
- a printed circuit board (PCB) has a plurality of bump structures;
- a light reflector arranged between at least part of adjacent bump structures;
- and
- a plurality of Mini-LEDs respectively disposed over the bump structures;
- wherein each of the Mini-LEDs includes a non-light-emitting layer and a light-emitting layer arranged on the non-light-emitting layer;
- wherein a bottom surface of the light-emitting layer of each of the Mini-LEDs is higher than a top surface of the light reflector;
- wherein the light reflector has a thickness (Tr), wherein the thickness (Tr) of the light reflector has a tolerance (Ae);
- wherein the PCB further has a plurality of bonding pads disposed over the bump structures, wherein the Mini-LEDs are disposed over the bonding pads;
- wherein each of the bump structures has a thickness (Hb), wherein each of the bonding pads has a thickness (Cu), wherein the non-light-emitting layer of each of the Mini-LEDs has a thickness (To), wherein Hb=Tr−Cu−(To−Tr*Ae).
A direct type backlight device, comprising:
- a printed circuit board (PCB);
- a light reflector disposed over the PCB;
- and
- a plurality of Mini-LEDs disposed over the PCB;
- wherein the light reflector is arranged between at least part of adjacent Mini-LEDs;
- wherein each of the Mini-LEDs includes a non-light-emitting layer and a light-emitting layer arranged on the non-light-emitting layer;
- wherein a bottom surface of the light-emitting layer of each of the Mini-LEDs is higher than a top surface of the light reflector;
- wherein the light reflector has a thickness (Tr), wherein the thickness (Tr) of the light reflector has a tolerance (Ae);
- wherein the PCB has a plurality of bump structures and a plurality of bonding pads disposed over the bump structures, wherein the Mini-LEDs are respectively disposed over the bump structures and the Mini-LEDs are disposed over the bonding pads;
- wherein the PCB further has a solder mask layer conformally formed on an upper surface of the PCB and a side surface of each of the bump structures;
- wherein each of the bump structures has a thickness (Hb), wherein each of the bonding pads has a thickness (Cu), wherein the non-light-emitting layer of each of the Mini-LEDs has a thickness (To), wherein the solder mask layer has a thickness (T), wherein Hb=Tr−Cu−(To−Tr*Ae)+T.
Dependencies are inferred from the claim text.