Spin valve with built-in electric field and spintronic device comprising the same
AssigneeInstitute of Semiconductors, Chinese Academy of Sciences
InventorsKaiyou Wang, Wenkai Zhu, Ce Hu
Life of this patent
Estimating the term…
Abstract
Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valve may comprise two or more magnetic layers stacked in sequence, wherein the spin valve further comprises at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers.
Claims8
A spin valve comprising two or more magnetic layers stacked, wherein the spin valve further comprises:
- at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers,
- wherein the at least one pair of nonmagnetic semiconductor layers is made of semiconductor materials with different conductivities.
Dependencies are inferred from the claim text.