Method for characterizing resistance state of programmable element

A method for determining a minimum programming current of programming a programmable element of an integrated circuit, comprising the step of:

• setting a first programming voltage to program the programmable element of the integrated circuit device and obtain a first programming current;
• setting a first read voltage to the integrated circuit at a first temperature to obtain a first read current, and a first resistance is derived from the first read current;
• (c) setting the first read voltage to the integrated circuit at a second temperature to obtain a second read current, the second temperature is at least 50° C. higher than the first temperature, and a second resistance is derived from the second read current;
• comparing the first resistance and the second resistance to characterize a resistance state of the programmable element is ohmic state;
• and
• referring the first programming current as the minimum programming current.

A method for determining a minimum programming current of programming a programmable element of an integrated circuit, comprising the step of:

• setting a first programming voltage to program the programmable element of the integrated circuit device and obtain a first programming current;
• setting a first read voltage to the integrated circuit at a first temperature to obtain a first read current, and a first resistance is derived from the first read current;
• setting the first read voltage to the integrated circuit at a second temperature to obtain a second read current, the second temperature is at least 50° C. higher than the first temperature, and a second resistance is derived from the second read current;
• comparing the first resistance and the second resistance to characterize a resistance state of the programmable element is hopping state or surface scattering state;
• tuning the integrated circuit and setting the first programming voltage to reprogram the programmable element to obtain a post-tuning programming current;
• setting the first read voltage to the integrated circuit at the first temperature to obtain a first post-tuning read current, and a first post-tuning resistance is derived from the first post-tuning read current;
• setting the first read voltage to the integrated circuit at the second temperature to obtain a second post-tuning read current, and a second post-tuning resistance is derived from the second post-tuning read current;
• comparing the first post-tuning resistance and the second post-tuning resistance to characterize the resistance state of the programmable element is ohmic state;
• referring the post-tuning programming current as the minimum programming current;
• and
• repeating the step of tuning the integrated circuit and setting the first programming voltage to the step of comparing the first post-tuning resistance and the second post-tuning resistance if the resistance state of the programmable element is characterized as hopping state or surface scattering state at the step of comparing the first post-tuning resistance and the second post-tuning resistance.