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US 11,307,200 B2Granted
Field effect transistor, device including the transistor, and methods of forming and using same
OwnerBharath Takulapalliinventor
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Abstract
The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.
Claims20
A method of sensing an ion, atom, or molecule, the method comprising the steps of:
- providing a device comprising:
- a substrate comprising a first surface and an opposing second surface;
- an etch region within a portion of the substrate;
- an insulating region proximate the etch region;
- a semiconductor layer overlying the insulating region;
- a source region formed using a first portion of the semiconductor layer, the source region overlying the insulating region and overlying the first surface;
- a drain region formed using a second portion of the semiconductor layer, the drain region overlying the insulating region and overlying the second surface;
- and
- a channel formed using a third portion of the semiconductor layer,
- wherein the channel spans between the source region and the drain region, and
- wherein the device comprises a nanopore
- providing material to be sensed;
- passing the material through a nanopore of the device;
- and
- detecting a variation in an electrical property of the device as the material passes through the nanopore.
12 more elements
Dependencies are inferred from the claim text.