SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method

A SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible,

• wherein the crucible is able to accommodate therein a raw material powder for growing the SiC single crystal and includes a crucible lower portion and a crucible upper portion, the crucible lower portion including a bottom portion and a side portion, and the crucible upper portion including a top portion provided with a seed crystal installation portion and a side portion,
• a male thread is provided at an outer circumference of the side portion of the crucible lower portion,
• a female thread engaging with the male thread is provided at an inner circumference of the side portion of the crucible upper portion, and
• the crucible includes a rotation mechanism that is configured to relatively move the crucible upper portion and the crucible lower portion in a vertical direction by rotating at least one of the crucible upper portion and the crucible lower portion,
• wherein the rotation mechanism includes
• a cylindrical body that has an inner diameter larger than an outer diameter of the crucible upper portion and has a groove portion cut from at least one of an upper end and a lower end of the cylindrical body, and
• a side portion protrusion portion provided at the outer circumference of the side portion of the crucible upper portion, and
• the rotation mechanism rotates the crucible upper portion relative to the crucible lower portion in a state where the side portion protrusion portion is inserted into the groove portion of the cylindrical body.