Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus

A method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and a showerhead, the method comprising:

• providing at least one substrate on a substrate support within the reaction space;
• independently controlling a temperature of the substrate support using a first temperature controller;
• independently controlling a temperature of the at least one chamber wall using a second temperature controller, wherein independently controlling the temperature of the at least one chamber wall comprises utilizing a plurality of temperature sensors and a plurality of heaters to heat multiple zones of the at least one chamber wall and a first recirculation loop embedded in the at least one chamber wall to cool the at least one chamber wall;
• independently controlling a temperature of a showerhead using a third temperature controller, wherein independently controlling the temperature of the showerhead comprises utilizing a first heater embedded in the showerhead to heat the showerhead and a second recirculation loop embedded in the showerhead to cool the showerhead;
• and
• alternatively and sequentially feeding titanium tetrachloride (TiCl4) and ammonia (NH3) into the reaction space to form the transition metal nitride film,
• wherein the temperature of the showerhead is controlled at a temperature between approximately 90° C. and approximately 140° C.,
• wherein the temperature of the substrate support is higher than the temperature of the at least one chamber wall during the step of alternatively and sequentially feeding titanium tetrachloride (TiCl4) and the ammonia (NH3) into the reaction space;
• wherein the step of independently controlling a temperature of the at least one chamber wall includes selectively providing active cooling to a first circulating fluid in the first recirculation loop to cool the at least one chamber wall and selectively providing additional power to at least one of the plurality of heaters to heat the at least one chamber wall to control a temperature of the at least one chamber wall between approximately 80° C. and approximately 160° C.;
• and
• wherein the step of independently controlling a temperature of the showerhead includes selectively providing active cooling to a second circulating fluid in the second recirculation loop to cool the shower head and selectively providing additional power to the first heater embedded in the showerhead.