Magnetically enhanced low temperature-high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films

A magnetically enhanced plasma apparatus comprising:

• a hollow cathode target assembly;
• an anode positioned on top of the hollow cathode target assembly, thereby forming a gap between the anode and the hollow cathode target assembly;
• a cathode magnet assembly;
• a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode target assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode target assembly;
• an electrode positioned adjacent to the row of magnets behind the gap;
• a pulse power supply coupled to the electrode;
• and
• a radio frequency (RF) power supply coupled to the hollow cathode target assembly, the RF power supply igniting and sustaining plasma in the hollow cathode target assembly, a frequency and power of the RF power supply being selected to increase at least one of a degree of dissociation of feed gas molecules, degree of ionization of feed gas atoms, the pulse power supply generating a train of voltage pulses, a pulse, frequency, duration, and amplitude of the train of negative voltage pulses being selected to increase a degree of dissociation of feed gas molecules to form a layer from sputtering hollow cathode target material onto a substrate.