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US 11,306,248 B2Granted
Silicon etching solution, silicon etching method, and method of producing silicon fin structure
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsMing-Yen Chung, Masaru Takahama
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Abstract
A silicon etching solution including a component which is a quaternary ammonium hydroxide represented by Formula (A-1), and a component which is a nonionic surfactant, in which an HLB value of the quaternary ammonium hydroxide is in a range of 12 to 15; in Formula (A-1), R1 to R4 each independently represent a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater.
Claims5
A silicon etching solution comprising:
- a component (A) which is a quaternary ammonium hydroxide represented by Formula (A-1);
- and
- a component (C) which is a nonionic surfactant,
- wherein an HLB value of the component (C) is in a range of 12 to 15,
- wherein the component (C) is a compound represented by Formula (C-1-1):
- wherein R1 to R4 each independently represents a monovalent hydrocarbon group, and the total number of carbon atoms contained in R1 to R4 is 10 or greater
- wherein X01 represents an integer of 7 to 13.
4 more elements
Dependencies are inferred from the claim text.