Polycrystalline silicon rod and method for producing same

A method for producing a polycrystalline silicon rod by the Siemens method comprising:

• assembling a polycrystalline silicon seed rod in a silicon deposition reactor,
• heating the seed rod up to a temperature of 1000° C. or more and less than the melting point of silicon by energization heating, and
• supplying a raw material gas including trichlorosilane gas and hydrogen gas as the main components to the reactor at the heating temperature to deposit and grow silicon on the seed rod surface, wherein
• the seed rod is heated up to a temperature of 1000° C. or more and less than the melting point of silicon, and then a mixed gas of silicon tetrachloride gas and hydrogen gas is supplied to the reactor for at least 10 min with the reactor wall temperature maintained at 30° C. or more and the pressure in the reactor maintained at 0.1 MPaG or less to etch the surface of the seed rod in the reactor, and subsequently a raw material gas including trichlorosilane gas and hydrogen gas as the main components is subsequently supplied at the heating temperature.