Method of manufacturing semiconductor device, substrate processing apparatus and program

A substrate processing apparatus, comprising:

• a process chamber that houses a workpiece;
• a first gas supplier that supplies silicon-containing gas to the process chamber;
• a second gas supplier that supplies oxygen-containing gas to the process chamber;
• a third gas supplier that supplies nitrogen-containing gas to the process chamber;
• a top electrode and a bottom electrode disposed in the process chamber;
• a high frequency power supplier that supplies high frequency power to the top electrode or the bottom electrode;
• a low frequency power supplier that supplies low frequency power to the top electrode or the bottom electrode;
• a switch that selects whether to supply high frequency power from the high frequency power supplier or low frequency power from the low frequency power supplier to each of the top electrode and the bottom electrode;
• and
• a controller that controls supply of gas by the first gas supplier, the second gas supplier, and the third gas supplier, and controls selective switching of power supply by the switch,
• and configured to perform at least:
• processing for forming a second silicon oxide film that configures an insulating film, by supplying silicon-containing gas and oxygen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode;
• and
• processing for forming a second silicon nitride film that configures the insulating film, by supplying silicon-containing gas and nitrogen-containing gas to the process chamber, and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode,
• when forming a vibratable insulating film having the first silicon oxide film, the first silicon nitride film, the second silicon oxide film, and the second silicon nitride film on the workpiece.

A non-transitory computer readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising, at least a procedure for forming a first silicon oxide film, a procedure for forming a first silicon nitride film, a procedure for forming a second silicon oxide film, and a procedure for forming a second silicon nitride film as procedures for forming a vibratable insulating film,

• the procedure for forming the second silicon oxide film including:
• supplying silicon-containing gas and oxygen-containing gas to a process chamber, and performing switching to supply low frequency power to a top electrode installed in the process chamber and supply high frequency power to a bottom electrode installed in the process chamber, and
• the procedure for forming the second silicon nitride film including:
• supplying silicon-containing gas and nitrogen-containing gas to the process chamber and performing switching to supply low frequency power to the top electrode and supply high frequency power to the bottom electrode.