Logic switching device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong Heo, Yunseong Lee, Sanghyun Jo
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Abstract
Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.
Claims20
A logic switching device comprising:
- a channel;
- a source and a drain both connected to the channel;
- a gate electrode arranged to face the channel;
- and
- a domain switching layer between the channel and the gate electrode, wherein the domain switching layer comprises at least one structure including at least one ferroelectric material region comprising a ferroelectric domain and at least one anti-ferroelectric material region comprising an anti-ferroelectric domain, and wherein the ferroelectric material region has a negative capacitance, the anti-ferroelectric material region has a positive capacitance and the sum of the two capacitances is positive, respectively during the logic switching device operation.
A logic switching device comprising:
- a channel;
- a source and a drain both connected to the channel;
- a gate electrode arranged to face the channel;
- and
- a domain switching layer between the channel and the gate electrode,
- wherein the domain switching layer has a non-hysteretic behavior characteristic at a polarization change according to an external electric field, and comprises at least one structure including at least one ferroelectric material region comprising a ferroelectric domain and at least one anti-ferroelectric material region comprising an anti-ferroelectric domain, and
- wherein the domain switching layer comprise multiple regions of at least one of the ferroelectric material region or the anti-ferroelectric region.
A logic switching device comprising:
- a channel;
- a source and a drain both connected to the channel;
- a gate electrode arranged to face the channel;
- and
- a domain switching layer between the channel and the gate electrode,
- wherein the domain switching layer is a non-memory element and comprises at least one structure including at least one ferroelectric material region comprising a ferroelectric domain and at least one anti-ferroelectric material region comprising an anti-ferroelectric domain, and
- wherein the logic switching device has a matched capacitance.
Dependencies are inferred from the claim text.