Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

A method of manufacturing a semiconductor device comprising:

• (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber in which a plurality of substrates is stacked, wherein the source gas nozzle extends along a stacking direction of the plurality of the substrates and is provided with a plurality of gas supply holes opened at positions corresponding to a stacking region of the plurality of the substrates;
• and
• (b) supplying a reactive gas capable of reacting with the source gas into the process chamber,
• wherein a cycle, in which (a) and (b) are alternately performed one by one, is performed once or more to form a film on the plurality of the substrates while satisfying conditions comprising:
• (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less;
• (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less;
• (iii) an inner temperature of the process chamber in (a) is 500° C. or less;
• and
• (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.