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AssigneeEntegris, Inc.
InventorsOleg Byl, Ying Tang, Joseph R. Despres, Joseph Sweeney, Sharad N. Yedave
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The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.
A gas supply assembly for providing a gas mixture comprising germanium tetrafluoride (GeF4) and hydrogen (H2) gases in an ion implantation chamber comprising:
A method of implanting germanium in a substrate, comprising introducing germanium tetrafluoride (GeF4) and hydrogen (H2) gases into an ion implantation chamber comprising, wherein introducing provides a gas mixture comprising GeF4 and H2 an ion implantation chamber, wherein H2 is present in an amount in the range of 25%-67%, or GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67.
Dependencies are inferred from the claim text.