Photoelectric conversion element and photoelectric conversion module

A photoelectric conversion element comprising:

• a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode;
• a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more first pixels;
• and
• a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more second pixels,
• wherein a resistance value of the quenching resistor of each second pixel is greater than a resistance value of the quenching resistor of each first pixel.

A photoelectric conversion element comprising:

• a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode that operates with a common bias voltage;
• a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more first pixels;
• a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more second pixels;
• a first resistor that is connected between the first line and a fixed potential line and converts the output currents from the two or more first pixels into a first voltage signal;
• and
• a second resistor that is connected between the second line and a fixed potential line and converts the output currents from the two or more second pixels into a second voltage signal,
• wherein a resistance value of the second resistor is less than a resistance value of the first resistor, and
• wherein a resistance value of the quenching resistor of each second pixel is greater than a resistance value of the quenching resistor of each first pixel.

A photoelectric conversion module comprising:

• a photoelectric conversion element;
• and
• a reader circuit that reads an output current from the photoelectric conversion element,
• wherein the photoelectric conversion element includes
• a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode that operates with a common bias voltage,
• a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more first pixels, and
• a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more second pixels,
• wherein the reader circuit or the photoelectric conversion element includes
• a first resistor that is connected between the first line and a fixed potential line and converts the output currents from the two or more first pixels into a first voltage signal, and
• a second resistor that is connected between the second line and a fixed potential line and converts the output currents from the two or more second pixels into a second voltage signal,
• wherein a resistance value of the second resistor is less than a resistance value of the first resistor, and
• wherein a resistance value of the quenching resistor of each second pixel is greater than a resistance value of the quenching resistor of each first pixel.

A photoelectric conversion element comprising:

• a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode;
• a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more first pixels;
• and
• a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels via a quenching resistor, and collectively extracts output currents from the two or more second pixels,
• wherein a light receiving area of each first pixel is larger than a light receiving area of each second pixel, and
• wherein a bias voltage which is applied to the second pixels is less than a bias voltage which is applied to the first pixels.