Three-dimensional oscillator structure
AssigneeIntel Corporation
InventorsDmitri E. Nikonov, Elijah V. Karpov, Ian A. Young
Life of this patent
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Abstract
Embodiments may relate to a structure to be used in a neural network. A first column and a second column, both of which are to couple with a substrate. A capacitor structure may be electrically coupled with the first column. An insulator-metal transition (IMT) structure may be coupled with the first column such that the capacitor structure is electrically positioned between the IMT structure and the first column. A resistor structure may further be electrically coupled with the IMT structure and the second column such that the resistor structure is electrically positioned between the second column and the IMT structure. Other embodiments may be described or claimed.
Claims20
A structure to be used in a neural network, wherein the structure comprises:
- a first column to couple with a face of a substrate, wherein the face of the substrate defines a lateral plane parallel to the face of the substrate and a vertical axis perpendicular to the lateral plane, wherein the first column is parallel to the vertical axis;
- a second column to couple with the face of the substrate, wherein the second column is parallel to the vertical axis;
- a capacitor structure electrically coupled with the first column;
- an insulator-metal transition (IMT) structure electrically coupled with the first column, wherein the capacitor structure is electrically positioned between the IMT structure and the first column;
- and
- a resistor structure electrically coupled with the IMT structure and the second column, wherein the resistor structure is electrically positioned between the second column and the IMT structure.
A structure that is a portion of a neural network, wherein the structure comprises:
- a substrate with a face, wherein the face defines a lateral plane parallel to the face of the substrate and a vertical axis perpendicular to the lateral plane;
- a first plurality of columns, wherein respective ones of the first plurality of columns are parallel to the vertical axis and are electrically coupled with averaging logic of the neural network;
- a second plurality of columns, wherein respective ones of the second plurality of columns are parallel to the vertical axis and are electrically coupled with a ground of the substrate;
- and
- an oxide oscillator electrically coupled with and electrically positioned between a first column of the first plurality of columns and a second column of the second plurality of columns, wherein the oxide oscillator includes:
- a capacitor structure electrically coupled with the first column;
- an insulator-metal transition (IMT) structure electrically coupled with the first column, wherein the capacitor structure is electrically positioned between the IMT structure and the first column;
- and
- a resistor structure electrically coupled with the IMT structure and the second column, wherein the resistor structure is electrically positioned between the second column and the IMT structure.
A method of forming a structure for use in a neural network, the method comprising:
- coupling a first column with a substrate, wherein the first column is parallel to a vertical axis of the structure, and wherein the vertical axis is perpendicular to a lateral axis of the structure;
- coupling a second column to the substrate, wherein the second column is parallel to the first column;
- coupling a first oscillator to the first column and the second column, wherein the first oscillator is at a first location along the vertical axis;
- and
- coupling a second oscillator to the first column and the second column, wherein the second oscillator is at a second location along the vertical axis.
Dependencies are inferred from the claim text.