MIM capacitor of embedded structure and method for making the same

A method for manufacturing an MIM capacitor of an embedded structure, comprising the following steps:

• step 1:
• forming a first front metal layer on a semiconductor substrate, and patterning the first front metal layer to form a first metal wire layer;
• step 2:
• forming an interlayer film on the semiconductor substrate on which the first metal wire layer is formed;
• step 3:
• forming, in the interlayer film, vias passing through the interlayer film, the vias comprising a first via and a second via;
• step 4:
• sequentially forming a capacitor lower electrode, a capacitor insulating dielectric layer, and a capacitor upper electrode on the surface of the interlayer film;
• step 5:
• defining a formation region of an MIM capacitor by means of photolithography, and removing the capacitor upper electrode, the capacitor insulating dielectric layer, and the capacitor lower electrode outside the formation region of the MIM capacitor by means of an etching process, such that the capacitor upper electrode, the capacitor insulating dielectric layer, and the capacitor lower electrode remaining in the formation region of the MIM capacitor are stacked to form the MIM capacitor;
• wherein the capacitor lower electrode is connected to the first metal wire layer by means of the first via;
• and
• the second via is located on the top of the first metal wire layer extending to the outside of the capacitor lower electrode;
• step 6:
• forming a side wall on a side face of the MIM capacitor;
• and
• step 7:
• forming a second front metal layer, and patterning the second front metal layer to form a second metal wire layer;
• wherein a patterned structure of the second metal wire layer comprises a lower electrode lead-out structure and an upper electrode lead-out structure;
• the bottom of the lower electrode lead-out structure is in contact with the second via and connected to the first metal wire layer by means of the second via;
• and
• the upper electrode lead-out structure covers the surface of the capacitor upper electrode of the MIM capacitor and extends to the surface of the interlayer film outside the MIM capacitor, and the upper electrode lead-out structure is isolated from the capacitor lower electrode by means of the side wall.