US 11,236,438 B2 · Silicon carbide substrate and method of growing SiC single crystal boules

Abstract

The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm−3, preferably 1·1018 cm−3, from the mean concentration of this dopant in the peripheral region (104).

Claims5

Dependent claims

Bulk silicon carbide substrate, comprising:

a doped inner region which forms 45%±15% of a total surface area of said substrate;
and
a ring shaped peripheral region doped with a concentration of a dopant different from a concentration of the dopant in the inner region and radially surrounding the inner region,
wherein a mean concentration of the dopant in the inner region differs by no more than 1·1018 cm−3 from a mean concentration of this dopant in the peripheral region, and wherein a maximum deviation of mean absorption coefficients of the inner region and the peripheral region is less than 5 cm−1.

1 more element

Dependencies are inferred from the claim text.

Silicon carbide substrate and method of growing SiC single crystal boules

Life of this patent

Silicon carbide substrate and method of growing SiC single crystal boules

Life of this patent

Abstract

Claims5