Arrangement for an EUV lithography apparatus

An extreme ultraviolet (EUV) lithography apparatus, comprising:

• an illumination system comprising a plasma-forming radiation source configured to emit EUV radiation, and a plurality of mirrors configured to shape and direct the emitted EUV radiation onto a reflective object plane as illumination EUV radiation;
• and
• a projection lens comprising a further plurality of mirrors configured to project the illumination EUV radiation into an image plane as projected EUV radiation,
• wherein at least one of the mirrors is a facet mirror which comprises facets having a larger dimensioning in a first direction than in a second direction perpendicular to the first direction, and wherein the at least one filament extends at least substantially parallel to the first direction of the facets, and
• wherein at least one further one of the mirrors comprises:
• a reflective optical element arranged upstream of the facet mirror and having an optically effective surface arranged in a beam path of the emitted radiation, the shaped and directed radiation, the illumination radiation or the projected radiation, and configured to reflect the EUV radiation incident on the optically effective surface, and
• a filament arrangement configured to produce a cleaning reagent sufficient to at least partly clean the optically effective surface, comprising:
• at least one filament arranged in the beam path and extending transversely at least in part across the beam path, wherein the filament extends along and in unobstructed opposition to the optically effective surface and at a predetermined elevation from the optically effective surface, and
• a voltage supply electrically connected to the at least one filament.

An arrangement for an extreme ultraviolet (EUV) lithography apparatus, comprising:

• a reflective optical element having an optically effective surface configured to reflect incident EUV radiation, and
• a filament arrangement configured to produce a reagent that cleans the optically effective surface, wherein the filament arrangement comprises at least one filament configured as a glow or heating element, wherein the at least one filament is arranged in direct proximity to and along the optically effective surface of the reflective optical element, and wherein a thickness and/or positioning of the at least one filament are/is selected to minimize an optical influence of the at least one filament in the far field of the EUV radiation reflected by the optically effective surface,
• wherein the at least one filament extends at least substantially tangentially with respect to a center of the optically effective surface, and
• wherein the reflective optical element is arranged upstream of a facet mirror during operation in a lithography apparatus, wherein the facet mirror comprises facets having a larger dimensioning in a first direction than in a second direction perpendicular to the first direction, and wherein the at least one filament extends at least substantially parallel to the first direction of the facets.