Sputtering apparatus and method of forming film
AssigneeUlvac, Inc.
InventorsYoshinori Fujii, Shinya Nakamura
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AssigneeUlvac, Inc.
InventorsYoshinori Fujii, Shinya Nakamura
Estimating the term…
A sputtering apparatus SM has: a vacuum chamber in which a substrate and a target are disposed to lie opposite to each other; a plasma generating means generating a plasma inside the vacuum chamber; and a magnet unit disposed above the target. The magnet unit has a plurality of magnets with different polarities on a substrate side. A leakage magnetic field in which a line passing through a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof. The magnet unit is divided, on an imaginary line extending from the center of the target toward a periphery thereof, into a plurality of segments each having a plurality of magnets.
A sputtering apparatus comprising:
A method of forming a film in which a substrate to be processed and a target are disposed to lie opposite to each other inside a vacuum chamber, and by generating a plasma inside the vacuum chamber, the target is sputtered to thereby form a thin film on a surface of the substrate,
Dependencies are inferred from the claim text.