Electrically modulated IR sensitive photodiode and its integration in CMOS

A substrate comprising a first and a second p-n junction, a common contact for jointly contacting one of the p-doped or n-doped regions of the two p-n junctions, and first and second further contacts for separately contacting the other of the p-doped and n-doped regions of the two p-n junctions, wherein an electrically modulatable photodiode comprising the substrate and a circuit is configured to:

• switch the second further contact at different times to at least one first and one second switching state, wherein in the first switching state the second further contact is switched to a floating state and in the second switching state a potential is applied, and
• apply a constant reverse bias voltage between the common contact and the first further contact while the second further contact is switched to the first switching state and while the second further contact is switched to the second switching state, and
• to measure a current flow caused by charge carriers which have been generated by impinging radiomagnetic waves in the substrate and which have reached the first further contact during each of the first and second switching states.