Semiconductor device including a capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHong-Yang Chen, Tian Sheng Lin, Yi-Cheng Chiu, Hung-Chou Lin, Yi-Min Chen, Kuo-Ming Wu, Chiu-Hua Chung
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Abstract
A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
Claims20
A capacitor structure for a power semiconductor device, the capacitor structure comprising:
- a semiconductor substrate;
- an isolation insulating layer having a ting-shape in plan view and comprising an outer periphery and an inner periphery defining an opening region;
- a first electrode disposed on the isolation insulating layer between the outer periphery and the inner periphery and having a ring-shape surrounding the opening region in plan view;
- a dielectric layer disposed on the first electrode;
- and
- a second electrode disposed on the dielectric layer.
A power semiconductor device, comprising:
- a power MOS transistor;
- and
- a capacitor having a breakdown voltage in a range from 600 V to 1000 V, wherein;
- the capacitor comprises:
- a semiconductor substrate;
- an isolation insulating layer having a ring-shape in plan view and comprising an outer periphery and an inner periphery defining an opening region;
- a first electrode disposed on the isolation insulating layer between the outer periphery and the inner periphery and having a ring-shape surrounding the opening region in plan view;
- a dielectric layer disposed on the first electrode;
- and
- a second electrode disposed on the dielectric layer.
A capacitor structure for a power semiconductor device, the capacitor structure comprising:
- a semiconductor substrate having a reduced surface well structure;
- an isolation insulating layer;
- a first electrode disposed on the isolation insulating layer;
- a dielectric layer disposed on the first electrode;
- a second electrode disposed on the dielectric layer;
- and
- a resistor electrically connected to the first electrode and a fixed potential,
- wherein the first electrode and the resistor are disposed on the same isolation insulating layer.
Dependencies are inferred from the claim text.