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US 11,143,951 B2Granted
Pellicle for an EUV lithography mask and a method of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue Lin
Life of this patent
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Abstract
A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.
Claims20
A pellicle for an EUV photo mask comprising:
- a frame portion made of Si;
- and
- a membrane disposed on the frame and including at least one metal layer, wherein:
- the membrane consisting of equal to or less than five layers or equal to or more than three layers,
- the pellicle has an EUV transmittance higher than 85% and smaller than 87.72% and an EUV reflectance lower than 0.25% and greater than 0.01%, at a wavelength of 13.5 nm,
- the membrane consists of:
- a base membrane layer made of silicon nitride or SiC;
- a core layer disposed on the base membrane layer;
- a cover layer disposed on the core layer and made of a doped silicon layer;
- a first metal layer disposed on the cover layer and made of Mo or Zr;
- and
- a second metal layer disposed on the first metal layer and made of Ru,
- a thickness of the core layer is largest in the membrane and in a range from 10 nm to 50 nm,
- a thickness of the second metal layer is smaller than a thickness of the first metal layer, and
- a thickness of the cover layer is smaller than the thickness of the first metal layer and in a range from 0.5 nm to 10 nm.
12 more elements
A pellicle for an EUV photo mask, comprising:
- a frame portion having an opening;
- and
- a membrane disposed on the frame and consisting of five layers, wherein:
- the five layers are:
- a base membrane layer made of silicon nitride or SiC;
- a core layer disposed on the base membrane layer and made of polysilicon or amorphous silicon;
- a cover layer disposed on the core layer;
- a first metal layer disposed on the cover layer;
- and
- a second metal layer disposed on the first metal layer,
- a thickness of the base membrane layer is in a range from 1 nm to 40 nm, and
- a thickness of the first metal layer is in a range from 1 nm to 10 nm and greater than a thickness of the second metal layer.
9 more elements
A pellicle for an EUV photo mask, comprising:
- a frame portion having an opening;
- and
- a membrane disposed on the frame and consisting of three layers, wherein:
- the three layers are:
- a base membrane layer made of SiC;
- a first metal layer disposed on the base membrane layer;
- and
- a second metal layer disposed on the first metal layer,
- wherein a thickness of the second metal layer is smaller than a thickness of the first metal layer.
6 more elements
Dependencies are inferred from the claim text.