Mask manufacturing method and mask set
AssigneeToshiba Memory Corporation
InventorsYuki Akamatsu, Nobuhiro Komine, Takashi Koike
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Abstract
A mask manufacturing method includes stacking a first antireflection layer on a first stacked body at a first film thickness so as to create a first transmissive type mask. In the first stacked body, a first semitransmissive layer, a first reflective layer, and a first transmissive substrate are stacked. The mask manufacturing method includes stacking a second antireflection layer on a second stacked body at a second film thickness so as to create a second transmissive type mask. In the second stacked body, a second semitransmissive layer, a second reflective layer, and a second transmissive substrate are stacked. The second film thickness is determined in accordance with a thermal expansion amount of the first mask.
Claims3
A mask manufacturing method comprising:
- providing a first mask including a first antireflection layer, at a first film thickness, stacked on a first pattern layer, a first reflective layer, and a first transmissive substrate;
- providing a second mask including a second antireflection layer, at a second film thickness, stacked on a second pattern layer, a second reflective layer, and a second transmissive substrate, wherein the second pattern layer has a thickness and component equivalent to the first pattern layer but has a different pattern than the first pattern layer, wherein the second reflective layer has a thickness and component equivalent to the first reflective layer, and wherein the second transmissive substrate has a thickness and component equivalent to the first transmissive substrate;
- calculating a first thermal expansion amount of the first mask from a first exposure amount in a first process;
- calculating a second thermal expansion amount of the second mask from a second exposure amount in a second process;
- adjusting the first film thickness and the second film thickness until a difference between the first thermal expansion amount and the second thermal expansion amount is reduced;
- fabricating the first mask including the first antireflection layer, at an adjusted first film thickness, stacked on the first pattern layer, the first reflective layer, the first transmissive substrate;
- and
- fabricating the second mask including the second antireflection layer, at an adjusted second film thickness, stacked on the second pattern layer, the second reflective layer, the second transmissive substrate.
Dependencies are inferred from the claim text.