Application structure of gallium nitride field-effect transistor in dimmer circuit

Abstract

An application structure of a gallium nitride field-effect transistor in a dimmer circuit is disclosed, including an LED module, a power supply circuit, a current holding circuit, and a drive circuit. The power supply circuit includes a power supply, a dimmer unit, and a rectifier circuit. The current holding circuit is electrically connected to the rectifier circuit, includes a first control switch, a capacitor capable of charging and discharging, and a plurality of resistors whose current is set, and is configured to provide a stable current to the dimmer unit. The first control switch is provided with a gallium nitride field-effect transistor. The drive circuit is electrically connected to the current holding circuit, includes a second control switch, a screen flicker prevention chip electrically connected to the LED module, and a plurality of resistors whose current is set, and is configured to stably drive the LED module to emit light. The second control switch is provided with a gallium nitride field-effect transistor.

Dependencies are inferred from the claim text.