Method, device and system for providing etched metallization structures

A method comprising:

• forming on a first dielectric layer a first sub-layer of a second layer of a metal, wherein at least a portion of the first sub-layer is formed based on a first metallization condition;
• forming a second sub-layer of the second layer, wherein at least a portion of the second sub-layer is formed based on a second metallization condition;
• and
• performing an etch through the second sub-layer toward the first sub-layer;
• wherein:
• the first sub-layer spans at least 5% of a thickness of the second layer;
• the second sub-layer spans at least 5% of the thickness of the second layer;
• a first average grain size of the first sub-layer is larger than a second average grain size of the second sub-layer, the second average grain size smaller than the first average grain size;
• and
• a difference between the first average grain size and the second average grain size is at least 10% of the first average grain size.

A system comprising:

• a circuit device comprising:
• a first layer comprising a dielectric;
• and
• a second layer of a metal on the first layer, the second layer comprising:
• a first sub-layer of the metal, the first sub-layer comprising a first average grain size, wherein the first sub-layer spans at least 5% of a thickness of the second layer;
• a second sub-layer of the metal, the second sub-layer comprising a second average grain size, wherein the second sub-layer spans at least 5% of the thickness of the second layer, the second average grain size smaller than the first average grain size;
• and
• a third sub-layer of the metal, the third sub-layer comprising a third average grain size, wherein the third sub-layer spans at least 5% of the thickness of the second layer;
• wherein:
• a first difference between the first average grain size and the second average grain size is at least 10% of the first average grain size;
• and
• a second difference between the third average grain size and the second average grain size is at least 10% of the third average grain size;
• and
• a circuit board coupled to the circuit device, the circuit board to communicate a signal a metallization structure of the second layer.