Multi-channel power combiner with phase adjustment

A system, comprising:

• a semiconductor device processing system to manufacture a semiconductor device;
• and
• a processing controller operatively coupled to said semiconductor device processing system, said processing controller configured to control an operation of the semiconductor device processing system;
• wherein the semiconductor device processing system is adapted to:
• form a multi-channel power combiner, comprising:
• at least two channels, wherein each channel comprises:
• a phase alignment circuit comprising a plurality of PMOS transistors and NMOS transistors each having an adjustable back gate bias voltage;
• at least one frequency multiplier after the phase alignment circuit;
• and
• at least one power amplifier after the at least one frequency multiplier and configured to amplify the power of a differential output of the phase alignment circuit;
• form at least one back gate voltage generator configured to provide the adjustable back gate bias voltage to at least one of the transistors;
• form a power combiner circuit configured to combine the power of the outputs of each channel, to yield a combined output having a power;
• form a sensor configured to sense the power of the combined output;
• and
• form a control circuit configured to adjust the back gate bias voltage provided by the at least one back gate voltage generator, based at least in part on the power of the combined output sensed by the sensor.

A semiconductor device, comprising:

• a multi-channel power combiner, comprising:
• at least two channels, wherein each channel comprises:
• a phase alignment circuit comprising a plurality of PMOS transistors and NMOS transistors each having an adjustable back gate bias voltage, and
• an injection-locked power amplifier (ILPA) after the phase alignment circuit;
• at least one back gate voltage generator configured to provide the adjustable back gate bias voltage to at least one of the transistors;
• a power combiner circuit configured to combine the power of the outputs of each channel, to yield a combined output having a power;
• a sensor configured to sense the power of the combined output;
• and
• a control circuit configured to adjust the back gate bias voltage provided by the at least one back gate voltage generator, based at least in part on the power of the combined output sensed by the sensor, wherein the back gate bias voltage may be used to adjust the phase of the input signal received by the phase alignment circuit.