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US 11,114,634 B2Granted
Photodiode
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung Bae Park, Kyu Sik Kim, Yong Wan Jin, Kwang Hee Lee, Dong-Seok Leem, Seon-Jeong Lim
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Abstract
A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
Claims6
A photodiode comprising:
- an anode;
- a cathode;
- and
- an intrinsic layer between the anode and the cathode, the intrinsic layer including lower, intermediate, and upper sublayers deposited in sequence, wherein a composition ratio of a P-type semiconductor relative to a N-type semiconductor is substantially constant throughout each of the lower, intermediate, and upper sublayers,
- wherein each sublayer of the lower, intermediate, and upper sublayers includes both of the P-type semiconductor and the N-type semiconductor,
- wherein the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the lower sublayer is an inverse of the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the upper sublayer,
- wherein the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the intermediate sublayer is about 5:1, and
- wherein the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the lower sublayer is greater than 10:1 and smaller than about 1000:1, and the composition ratio of the P-type semiconductor relative to the N-type semiconductor in the upper sublayer is smaller than 1:10 and greater than about 1:1000.
5 more elements
Dependencies are inferred from the claim text.