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US 11,114,616 B2Granted
Ti-based amorphous alloy and phase change memory device applying the same
AssigneeSamsung Electronics Co., Ltd.
InventorsEunsung Lee, Duseop Yoon, Joungeun Yoo
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Abstract
Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
Claims14
A titanium-based amorphous alloy comprising:
- titanium;
- antimony;
- at least one metallic component, wherein the at least one metallic component includes Ni;
- and
- at least one additional metallic component or at least one metalloid component,
- wherein the titanium-based amorphous alloy is Te-free, and
- the titanium-based amorphous alloy being configured as a phase-change material capable of having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
4 more elements
A titanium-based amorphous alloy comprising:
- titanium (Ti);
- antimony (Sb);
- nickel (Ni);
- and
- optionally at least one other element (D′), the titanium-based amorphous alloy being represented by Chemical Formula 1,
- TiaSbbNicD′d, [Chemical Formula 1]
- wherein, in Chemical Formula 1,
- a+b+c+d=1,
- a is greater than 0.2,
- b is greater than 0 and less than 0.3,
- c is greater than 0.05 and less 0.40,
- d is greater than or equal to 0,
- wherein the titanium-based amorphous alloy is Te-free, and
- the titanium-based amorphous alloy is capable of having a reversible phrase change, between a titanium-based amorphous alloy phase and at least one crystalline phase, in response to an applied energy to the titanium-based amorphous alloy.
11 more elements
Dependencies are inferred from the claim text.