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US 11,114,612 B2Granted
Magnetoresistive random access memory and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsDa-Jun Lin, Bin-Siang Tsai, Shih-Wei Su, Ting-An Chien
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Abstract
A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, part of the MTJ stack is removed, a first cap layer is formed on a sidewall of the MTJ stack, and the first cap layer and the MTJ stack are removed to form a first MTJ and a second MTJ.
Claims20
A method for fabricating semiconductor device, comprising:
- forming a magnetic tunneling junction (MTJ) stack on a substrate;
- removing part of the MTJ stack;
- forming a first cap layer on a sidewall of the MTJ stack;
- and
- removing portions of the first cap layer and portions of the MTJ stack to form a first MTJ and a second MTJ.
2 more elements
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate, wherein the MTJ comprises:
- a pinned layer on the substrate;
- a barrier layer on the pinned layer;
- and
- a free layer on the barrier layer, wherein a critical dimension of a bottom surface of the free layer is different from a critical dimension of a top surface of the barrier layer.
2 more elements
Dependencies are inferred from the claim text.