Light emitting diode

A solid-state light emitting device, comprising:

• at least one single-die semiconductor light-emitting diode with a p-n junction including an optically-transmissive enclosure the boundaries of which form an inner space where in the inner space has a region of a gaseous environment other than air;
• and
• a secondary optically-transmissive enclosure within the inner space of the outer enclosure the boundaries of which form an interior space wherein the interior space has a region of a gaseous environment other than air, different than the gaseous environment in the inner space;
• wherein a heat exchanger is disposed adjacent to the boundaries of the secondary optically-transmissive enclosure.

A light-emission device, comprising:

• at least one of a single-die, a two-lead GaN semiconductor light-emitting diode die capable of emitting radiation said diode the donor;
• and
• a recipient luminophoric element for converting non-radiatively energy transferred from the donor to the luminophoric element;
• wherein the ground-state of the acceptor is capable of reducing the excited state lifetime of the donor;
• wherein the two-lead diode die is within the interior space of a secondary optically-transmissive enclosure with a layer of luminescent element, said element an acceptor;
• wherein the same or different luminescent element is in the interior space of each of a plurality of different secondary optically-transmissive enclosures, said element a converter;
• wherein the interior space of both the secondary optically-transmissive enclosure containing a light emitting diode die and the secondary optically-transmissive enclosures containing luminescent element includes a region of the same or different Noble or otherwise inert gas;
• wherein all of the secondary enclosures are within the inner space of an outer optically-transmissive enclosure;
• and
• wherein a heat exchanger is disposed in the inner space or the interior space.