Advanced electronic device structures using semiconductor structures and superlattices

A semiconductor structure comprising:

• a p-type superlattice region;
• an i-type superlattice region;
• and
• an n-type superlattice region;
• wherein:
• the p-type superlattice region is adjacent to the i-type superlattice region;
• the i-type superlattice region is adjacent to the n-type superlattice region;
• and
• at least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region comprises a semiconductor superlattice with a plurality of unit cells each comprising at least two distinct layers formed of a substantially single crystal semiconductor, the semiconductor superlattice having a polar crystal structure with a growth axis being substantially parallel to a spontaneous polarization axis of the polar crystal structure, a monotonically changing average composition of the unit cells of the semiconductor superlattice exhibiting a monotonic change from a first average composition corresponding to a first wider band gap (WBG) material to a second average composition corresponding to a first narrower band gap (NBG) material, or from a third average composition corresponding to a second NBG material to a fourth average composition corresponding to a second WBG material, such that there are no abrupt changes in polarization at interfaces between each region.