Optoelectronic component

An optoelectronic component comprising an active layer having a multiple quantum well structure, wherein the multiple quantum well structure comprises quantum well layers, comprising Alx1Iny1Ga1-x1-y1N with 0≤x1<0.03, 0≤y1≤0.1 and x1+y1≤1, and barrier layers comprising Alx2Iny2Ga1-x2-y2N with 0≤x2≤1, 0≤y2≤0.02 and x2+y2≤1, the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max≥0.05, a minimum value of the aluminium content in the barrier layers is x2,min<0.05, the multiple quantum well structure is arranged between an n-type semiconductor region and a p-type semiconductor region, an intermediate layer is arranged between a barrier layer and a subsequent quantum well layer in a direction pointing from the n-type semiconductor region to the p-type semiconductor region, the intermediate layer is directly adjacent to the subsequent quantum well layer, and the intermediate layer comprises Alx3Iny3Ga1-x3-y3N with 0≤x3<0.03, 0≤y3≤0.02 and x3+y3≤1.