Semiconductor device
AssigneeJapan Display Inc.
InventorsTakeshi Sakai, Yuichiro Hanyu, Masahiro Watabe
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Abstract
The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.
Claims6
A semiconductor device having a thin film transistor (TFT) comprising an oxide semiconductor layer, a drain electrode, a source electrode, a gate insulating film, a gate electrode, and a channel, which is formed in the oxide semiconductor layer between the drain electrode and the source electrode,
- a channel length direction is defined by a direction the drain electrode and the source electrode oppose to each other,
- a channel width direction is defined by an orthogonal direction to the channel length direction,
- wherein a width of the oxide semiconductor layer in the channel width direction is wider than a width of the gate electrode in the channel width direction,
- a width of the drain electrode and a width of the source electrode in the channel width direction are wider than the width of the oxide semiconductor layer in the channel width direction, and
- wherein the gate insulating film is formed between the gate electrode and the oxide semiconductor layer,
- the oxide semiconductor layer that is not covered by the gate electrode is covered by a silicon oxide film in addition to the gate insulating film.
A semiconductor device having a thin film transistor (TFT) comprising an oxide semiconductor layer, a drain electrode, a source electrode, a gate insulating film, a gate electrode, and a channel, which is formed in the oxide semiconductor layer between the drain electrode and the source electrode,
- a channel length direction is defined by a direction the drain electrode and the source electrode oppose to each other,
- a channel width direction is defined by an orthogonal direction to the channel length direction,
- wherein a width of the oxide semiconductor layer in the channel width direction is wider than a width of the gate electrode in the channel width direction,
- wherein a resistivity of the oxide semiconductor layer in the area that does not overlap the gate electrode is bigger than a resistivity of the oxide semiconductor layer in the area that overlaps the gate electrode,
- a width of the drain electrode and a width of the source electrode in the channel width direction are wider than the width of the oxide semiconductor layer in the channel width direction, and
- wherein the gate insulating film is formed between the gate electrode and the oxide semiconductor layer,
- the oxide semiconductor layer that is not covered by the gate electrode is covered by a silicon oxide film in addition to the gate insulating film.
A semiconductor device having a thin film transistor (TFT) comprising an oxide semiconductor layer, a drain electrode, a source electrode, a gate insulating film, a gate electrode, and a channel, which is formed in the oxide semiconductor layer between the drain electrode and the source electrode,
- a channel length direction is defined by a direction the drain electrode and the source electrode oppose to each other,
- a channel width direction is defined by an orthogonal direction to the channel length direction,
- wherein a width of the oxide semiconductor layer in the channel width direction is wider than a width of the gate electrode in the channel width direction,
- a width of the drain electrode and a width of the source electrode in the channel width direction are wider than the width of the oxide semiconductor layer in the channel width direction,
- wherein the drain electrode and the source electrode of the TFT are formed on a lower layer than the gate electrode of the TFT, and
- wherein the drain electrode and the source electrode directly contact the oxide semiconductor layer of the TFT without a through hole, and
- wherein the gate insulating film is formed between the gate electrode and the oxide semiconductor layer,
- the oxide semiconductor layer that is not covered by the gate electrode is covered by a silicon oxide film in addition to the gate insulating film.
Dependencies are inferred from the claim text.