Integrated circuit device having fin-type active

An integrated circuit device comprising:

• first and second fin-type active regions protruding from a top surface of a substrate and extending in a first direction that is parallel to the top surface of the substrate;
• first and second gate structures extending on the substrate in a second direction that is perpendicular to the first direction;
• a first source/drain region on a first side of the first gate structure, wherein the first gate structure partially overlaps the first source/drain region in a direction perpendicular to the substrate;
• a first contact structure on the first source/drain region;
• a contact capping layer on the first contact structure, the contact capping layer including a protruding portion extending outward from a sidewall of the first contact structure;
• and
• an interlayer dielectric on the first and second gate structures and the first source/drain region,
• wherein the contact capping layer comprises a first capping layer and a second capping layer, which are sequentially arranged on the first contact structure,
• wherein the first capping layer is arranged on the first contact structure and a sidewall of a first contact hole which penetrates the interlayer dielectric,
• wherein the first capping layer is on a sidewall and a bottom surface of the second capping layer, and
• wherein the second capping layer is not in contact with the interlayer dielectric.

An integrated circuit device comprising:

• a fin-type active region protruding from a top surface of a substrate and extending in a first direction that is parallel to the top surface of the substrate;
• a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction that is perpendicular to the first direction;
• a source/drain region on a first side of the gate structure;
• an interlayer dielectric on the gate structure and the source/drain region;
• a first contact structure in a lower portion of a contact hole and connected to the source/drain region, the contact hole penetrating the interlayer dielectric;
• and
• a contact capping layer in an upper portion of the contact hole and on the first contact structure,
• wherein the contact capping layer comprises a protruding portion extending outward from a sidewall of the first contact structure, and
• wherein the protruding portion is at least partially surrounded by the interlayer dielectric.