Semiconductor device including capacitor
AssigneeSamsung Electronics Co., Ltd.
InventorsSunmin Moon, Young-Lim Park, Kyuho Cho, Hanjin Lim
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Abstract
Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
Claims19
A semiconductor device, comprising a capacitor including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate,
- wherein the dielectric layer comprises a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure,
- wherein the capacitor further includes two seed layers respectively disposed between the hafnium oxide layer and one selected from the bottom electrode and the top electrode,
- wherein a first one of the two seed layers is an oxidation seed layer, and
- wherein a second one of the two seed layers is a conductive seed layer including at least one selected from the group consisting of cobalt, nickel, copper, and cobalt nitride.
A semiconductor device, comprising:
- a first electrode;
- a dielectric layer disposed on the first electrode, the dielectric layer comprising a hafnium oxide layer and an oxidation seed layer being in contact with each other;
- a second electrode disposed on the dielectric layer;
- and
- a conductive seed layer disposed between the second electrode and the hafnium oxide layer,
- wherein the hafnium oxide layer includes hafnium oxide having a tetragonal crystal structure, and
- wherein the conductive seed layer includes a conductive seed material, the conductive seed material including cobalt, nickel, copper, and cobalt nitride.
Dependencies are inferred from the claim text.