Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device comprising:

• a first electrode;
• a second electrode;
• a gate electrode;
• an n-type first silicon carbide region positioned between the first electrode and the second electrode and between the gate electrode and the second electrode;
• a p-type second silicon carbide region positioned between the first electrode and the first silicon carbide region;
• a third silicon carbide region positioned between the first electrode and the p-type second silicon carbide region and spaced apart from the n-type first silicon carbide region, the third silicon carbide region being metallized silicon carbide containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt), and the third silicon carbide region having a crystal structure of silicon carbide;
• and
• a gate insulating layer positioned between the gate electrode and the p-type second silicon carbide region, wherein
• the at least one element is present at the carbon site of the crystal structure of silicon carbide, and
• a concentration of the at least one element in the third silicon carbide region is 1×1019 cm−3 to 5×1022 cm−3.