Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsShaofeng Ding, Jinho Park, Yongseung Bang, Jeong Hoon Ahn
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a first electrode on a substrate, a second electrode on the first electrode, a first dielectric layer between the first electrode and the second electrode; a third electrode on the second electrode, a second dielectric layer between the second electrode and the third electrode, and a first contact plug penetrating the third electrode and contacting the first electrode, the first contact plug contacts a top surface of the third electrode and a side surface of the third electrode.
Claims20
A semiconductor device, comprising:
- a first electrode on a substrate;
- a second electrode on the first electrode;
- a first dielectric layer between the first electrode and the second electrode;
- a third electrode on the second electrode;
- a second dielectric layer between the second electrode and the third electrode;
- a first contact plug penetrating the third electrode and contacting the first electrode;
- and
- a buffer dielectric layer on a top surface of the third electrode,
- wherein the first contact plug contacts the top surface of the third electrode and a side surface of the third electrode, the buffer dielectric layer does not cover a first portion of the top surface of the third electrode, and the first portion of the top surface of the third electrode is in contact with the first contact plug.
A semiconductor device, comprising:
- a first electrode on a substrate, the first electrode having a first penetrating portion;
- a first dielectric layer on a top surface of the first electrode and in the first penetrating portion;
- a second electrode on the first dielectric layer, the second electrode having a second penetrating portion that does not overlap the first penetrating portion;
- a second dielectric layer on a top surface of the second electrode and in the second penetrating portion;
- a third electrode on the second dielectric layer, the third electrode having a third penetrating portion and a fourth penetrating portion, the third penetrating portion overlapping the second penetrating portion, the fourth penetrating portion overlapping the first penetrating portion;
- and
- a first contact plug in the second and third penetrating portions, the first contact plug connecting the first electrode to the third electrode.
A semiconductor device, comprising:
- a first electrode on a substrate;
- a second electrode on the first electrode;
- a third electrode on the second electrode;
- a dielectric layer between the first electrode, the second electrode and the third electrode;
- a first contact plug connecting the first electrode to the third electrode;
- a second contact plug penetrating a portion of the dielectric layer and contacting the second electrode;
- a lower connection line between the substrate and the first electrode;
- an upper connection line on a top surface of the second contact plug;
- and
- a through plug connecting the lower connection line to the upper connection line,
- wherein a bottom surface of the first contact plug is higher than a bottom surface of the first electrode.
Dependencies are inferred from the claim text.