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US 11,114,504 B1Granted
Semiconductor device including variable resistance layer
AssigneeSK hynix Inc.
InventorJae Hyun Han
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a substrate, a gate structure disposed on the substrate, a hole pattern penetrating the gate structure on the substrate, and a first variable resistance layer, a second variable resistance layer, and a channel layer sequentially disposed on a sidewall surface of the gate structure. The gate structure includes at least one gate electrode layer and at least one interlayer insulation layer that are alternately stacked. The first and second variable resistance layers include ions exchangeable with each other.
Claims20
A semiconductor device comprising:
- a substrate;
- a gate structure disposed on the substrate, the gate structure comprising at least one gate electrode layer and at least one interlayer insulation layer that are alternately stacked;
- a hole pattern penetrating the gate structure on substrate;
- and
- a first variable resistance layer, a second variable resistance layer, and a channel layer sequentially disposed on a sidewall surface of the gate electrode layer in the hole pattern,
- wherein the first and second variable resistance layers comprise ions exchangeable with each other.
3 more elements
A semiconductor device comprising:
- a substrate;
- a gate structure disposed on the substrate, the gate structure comprising at least one gate electrode layer and at least one interlayer insulation layer that are alternately stacked along a first direction perpendicular to an upper surface of the substrate, wherein the gate structure extends in a second direction perpendicular to the first direction;
- and
- a first variable resistance layer, a second variable resistance layer, and a channel layer that are sequentially disposed on a sidewall surface of the gate structure on the substrate,
- wherein the first and second variable resistance layers comprise oxygen exchangeable with each other.
2 more elements
Dependencies are inferred from the claim text.