Sensor, array substrate containing sensor, display panel containing array substrate

A sensor, comprising:

• a base substrate;
• a voltage dividing photodiode on the base substrate;
• a detecting photodiode on the base substrate;
• a first power terminal;
• and
• a second power terminal,
• wherein:
• the voltage dividing photodiode comprises a first electrode, a first P-type semiconductor layer, a first I-type semiconductor layer, a first N-type semiconductor layer, and a second electrode arranged in a stack,
• the detecting photodiode comprises a third electrode, a second P-type semiconductor layer, a second I-type semiconductor layer, a second N-type semiconductor layer, and a fourth electrode arranged in a stack,
• the second power terminal comprises at least one metal layer,
• the first electrode is electrically connected to the first power terminal,
• the second electrode and the third electrode form a unitary structure,
• the fourth electrode is electrically connected to the second power terminal,
• the detecting photodiode is configured to operate with a reverse bias applied by the first power terminal and the second power terminal, so as to detect a light intensity, and
• the unitary structure formed by the second electrode and the third electrode is opaque and covers an entirety of the first electrode, the first P-type semiconductor layer, the first I-type semiconductor layer, and the first N-type semiconductor layer of the voltage dividing photodiode, so that the voltage dividing photodiode is configured to operate substantially permanently in a dark state.