Image sensor
AssigneeSK hynix Inc.
InventorWon-Jun Lee
Life of this patent
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Abstract
An image sensor includes a photoelectric conversion element structured to receive incident light and convert the received light into electric charges; a plurality of transfer transistors electrically coupled to the photoelectric conversion element to respond to a transfer signal to selectively transfer the electric charges out of the photoelectric conversion element; and a lag prevention structure formed at a center of the photoelectric conversion element and structured to receive the transfer signal to operate together with the plurality of transfer transistors to facilitate transfer the electric charges out of the photoelectric conversion element.
Claims18
An image sensor comprising:
- a photoelectric conversion element structured to receive incident light and convert the received light into electric charges;
- a monochromatic color separation element overlapping with the photoelectric conversion element;
- a plurality of light focusing elements formed over the color separation element;
- a plurality of transfer transistors electrically coupled to the photoelectric conversion element to respond to a transfer signal to selectively transfer the electric charges out of the photoelectric conversion element;
- and
- a lag prevention structure formed at a center of the photoelectric conversion element and structured to receive the transfer signal to operate together with the plurality of transfer transistors to facilitate transfer the electric charges out of the photoelectric conversion element,
- wherein the lag prevention structure includes an impurity region and an ohmic contact layer, and
- wherein the impurity region is formed in the photoelectric conversion element, and the ohmic contact layer is formed over the impurity region, and
- wherein the number of the plurality of light focusing elements is the same as the number of the plurality of transfer transistors.
An image sensor comprising:
- a plurality of pixel blocks isolated by an isolation structure,
- each of the plurality of pixel blocks comprising:
- a substrate having a first surface and a second surface that are on opposite sides of the substrate, and including a photoelectric conversion element formed in the substrate;
- a monochromatic color separation element formed over the second surface of the substrate, and overlapping with the photoelectric conversion element;
- a plurality of light focusing elements formed over the color separation element;
- a plurality of transfer transistors formed over the first surface of the substrate, and coupled to the photoelectric conversion element;
- and
- a lag prevention structure formed in the photoelectric conversion element, and including an impurity region which is positioned at a center of the photoelectric conversion element,
- wherein the lag prevention structure further includes an ohmic contact layer,
- wherein the impurity region is formed in the photoelectric conversion element, and the ohmic contact layer is formed over the impurity region, and
- wherein the number of the plurality of light focusing elements is the same as the number of the plurality of transfer transistors.
An image sensor comprising:
- a plurality of pixel blocks isolated by an isolation structure and including a first pixel block to a fourth pixel block which are positioned adjacent to one another among the plurality of pixel blocks and share a first floating diffusion, wherein each of the first pixel block to the fourth pixel block comprises:
- a photoelectric conversion element;
- a lag prevention structure formed at a center of the photoelectric conversion element;
- and
- a plurality of transfer transistors sharing the photoelectric conversion element, and
- wherein the first floating diffusion is electrically coupled to any one of the plurality of transfer transistors in each of the first pixel block to the fourth pixel block.
Dependencies are inferred from the claim text.