Back-illuminated sensor and a method of manufacturing a sensor

An image sensor for sensing at least one of deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation and charged particles, the image sensor comprising:

• a semiconductor membrane including circuit elements formed on a first surface of the semiconductor membrane, first metal interconnects formed over the circuit elements, and second metal interconnects disposed above the first metal interconnects and being coupled to the circuit elements;
• and
• a pure boron layer formed on a second surface of the semiconductor membrane,
• wherein the first metal interconnects comprise a refractory metal, and
• wherein the second metal interconnects comprise at least one of aluminum and copper.

An image sensor for sensing at least one of deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation and charged particles, the image sensor comprising:

• a semiconductor membrane having a first p-type doping concentration and including circuit elements formed on a first surface thereof;
• first metal interconnects connected to at least one of said circuit elements, the first metal interconnects comprising a refractory metal;
• second metal interconnects disposed above the first metal interconnects and coupled to the circuit elements;
• a pure boron layer formed on a second surface of the semiconductor membrane;
• and
• a p-doped layer formed in the semiconductor membrane immediately adjacent to the pure boron layer, said p-doped layer having a second p-type doping concentration that is greater than said first p-type doping concentration,
• wherein the second metal interconnects comprise at least one of aluminum and copper.