Back to results
US 11,114,487 B2Granted
Photoelectric conversion apparatus and imaging system using the same
AssigneeCanon Kabushiki Kaisha
InventorsMasahiro Kobayashi, Yuichiro Yamashita
Life of this patent
Estimating the term…
Abstract
In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.
Claims53
A photoelectric conversion apparatus comprising:
- a first photoelectric conversion portion including a first semiconductor region of a first conductive type;
- a second photoelectric conversion portion including a second semiconductor region of the first conductive type;
- a first region where a first storage portion configured to hold a signal based on a charge generated by the first photoelectric conversion portion is arranged;
- a second region where a second storage portion configured to hold a signal based on a charge generated by the second photoelectric conversion portion is arranged;
- a first floating diffusion portion arranged at different location from the first storage portion and configured to hold a signal based on a charge generated by the first photoelectric conversion portion;
- a first electrode arranged in the first region in a plan view;
- a second electrode arranged in the second region in the plan view;
- and
- a first transistor connected to the first floating diffusion portion, the first transistor being one of a reset transistor, an amplification transistor, and a selection transistor,
- wherein a first element isolation portion using an insulator is arranged between the first transistor and the first photoelectric conversion portion, and
- wherein the first electrode and the second electrode are arranged on a same active region.
8 more elements
A photoelectric conversion apparatus comprising:
- a first photoelectric conversion portion including a first semiconductor region of a first conductive type;
- a second photoelectric conversion portion including a second semiconductor region of the first conductive type;
- a first storage portion configured to hold a signal based on a charge generated by the first photoelectric conversion portion;
- a second storage portion configured to hold a signal based on a charge generated by the second photoelectric conversion portion;
- a first floating diffusion portion arranged at different location from the first storage portion and configured to hold a signal based on a charge generated by the first photoelectric conversion portion;
- a second floating diffusion portion arranged at different location from the second storage portion and configured to hold a signal based on a charge generated by the second photoelectric conversion portion;
- a first transistor connected to the first floating diffusion portion, the first transistor being one of a reset transistor, an amplification transistor, and a selection transistor;
- a second transistor connected to the second floating diffusion portion, the second transistor being one of a reset transistor, an amplification transistor, and a selection transistor,
- an element isolation portion,
- wherein the element isolation portion has a first element isolation portion using a PN junction arranged between the first semiconductor region and the second semiconductor region, a second element isolation portion using an insulator arranged between the first semiconductor region and the first transistor, and
- wherein the first element isolation portion does not include an insulator.
8 more elements
Dependencies are inferred from the claim text.