Optoelectronics and CMOS integration on GOI substrate

A structure comprising:

• a germanium layer above a semiconductor substrate in a first region of the semiconductor substrate;
• an optoelectronic device on the germanium layer in the first region, the optoelectronic device has a bottom cladding layer, an active region adjacent to and contacting a waveguide, and a top cladding layer, wherein the bottom cladding layer is on the germanium layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region;
• and
• a silicon device on a silicon layer in a second region of the semiconductor substrate,
• wherein both the top cladding layer and the bottom cladding layer are AlGaAs and the active region is GaAs.

A structure comprising:

• a germanium layer above a semiconductor substrate in a first region of the semiconductor substrate;
• an optoelectronic device on the germanium layer in the first region, the optoelectronic device has a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is on the germanium layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region;
• a silicon device on a silicon layer in a second region of the semiconductor substrate;
• and
• a waveguide embedded within an insulator layer, the waveguide is in direct contact with a sidewall of the active region of the optoelectronic device, wherein both the top cladding layer and the bottom cladding layer are AlGaAs and the active region is GaAs.